vishay tlhb580. document number 83021 rev. 1.6, 30-aug-04 vishay semiconductors www.vishay.com 1 e2 pb pb-free 19223 high efficiency blue led, ? 5 mm untinted non - diffused package description this device has been redesigned in 1998 replacing sic by gan technology to meet the increasing demand for high efficiency blue leds. it is housed in a 5 mm waterclear plastic package. all packing units are categorized in luminous intensity groups. that allows users to assemble leds with uni- form appearance. features ? gan on sic technology standard ? 5 mm t-1 3 / 4 package small mechanical tolerances small viewing angle very high intensity luminous intensity categorized esd class 1 lead-free device applications status lights off / on indicator background illumination readout lights maintenance lights legend light parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlhb580. part color, luminous intensity angle of half intensity ( ? ) technology TLHB5800 blue, i v > 130 mcd 4 gan on sic tlhb5802 blue, i v = (240 to 640) mcd 4 gan on sic parameter test condition symbol value unit reverse voltage v r 5v dc forward current t amb 65 c i f 20 ma surge forward current t p 10 si fsm 0.1 a power dissipation t amb 65 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 350 k/w
www.vishay.com 2 document number 83021 rev. 1.6, 30-aug-04 vishay tlhb580. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified blue tlhb580. 1) in one packing unit i vmin /i vmax 0.5 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 20 ma TLHB5800 i v 130 380 mcd tlhb5802 i v 430 1500 mcd dominant wavelength i f = 10 ma d 466 nm peak wavelength i f = 10 ma p 428 nm angle of half intensity i f = 10 ma ? 4 deg forward voltage i f = 20 ma v f 3.9 4.5 v reverse voltage i r = 10 av r 5v figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 25 50 75 100 125 95 10918 p - power dissipation ( mw ) v t amb ? ambient temperature ( c) 0 100 80 60 40 20 0 10 20 30 40 60 15900 50 i - forward current ( ma ) f t amb - ambient temperature ( c) 100 80 60 40 20 0 figure 3. rel. luminous intens ity vs. angular displacement figure 4. forward current vs. forward voltage 0.4 0.2 0 0.2 0.4 0.6 95 10022 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel 1 10 100 v f - forward voltag e(v) 15846 f i - forward current ( ma ) 0123 45678
vishay tlhb580. document number 83021 rev. 1.6, 30-aug-04 vishay semiconductors www.vishay.com 3 figure 5. rel. luminous flux vs. ambient temperature figure 6. relative luminous flux vs. forward current figure 7. relative intensity vs. wavelength 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 15847 i - relative luminous intensity vrel i f =10ma t amb - ambient temperature ( c) -10 10 20 30 40 50 60 70 80 90 100 0 0.01 0.1 1 10 100 i f - forward current ( ma ) 15848 i - relative luminous intensity vrel 110 0 20 40 60 80 100 120 350 400 450 500 550 600 - wavelenght ( nm ) 15849 i - relative luminous intensity (%) vrel i f =10ma
www.vishay.com 4 document number 83021 rev. 1.6, 30-aug-04 vishay tlhb580. vishay semiconductors package dimensions in mm 95 11476
vishay tlhb580. document number 83021 rev. 1.6, 30-aug-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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